Room-Temperature Preperation of InGaAsN Quantum Dot Lasers Grown by MOCVD
نویسندگان
چکیده
An InGaAsN single-layer quantum dot ~QD! laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition ~MOCVD!. The ridge-waveguide edge emitting laser diodes ~LD! were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at room temperature. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1848293# All rights reserved.
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